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| BD787 - NPN, BD788 - PNP Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high-speed switching applications. Features http://onsemi.com * Low Collector-Emitter Sustaining Voltage - VCEO(sus) 60 Vdc (Min) * High Current-Gain - Bandwidth Product - * * fT = 50 MHz (Min) @ IC = 100 mAdc Collector-Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc Pb-Free Packages are Available* 4 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 15 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter Base Voltage Collector Current Base Current Symbol VCEO Value 60 80 Unit Vdc Vdc Vdc Adc Adc IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII III I I II IIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III II IIIIIIIIIIIIIIIIIII III I I III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIII I IIIIIIIIIIIIIIIIIII III III III IIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIII VCBO VEBO IC IB 6.0 4.0 8.0 1.0 - Continuous - Peak - Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 15 0.12 W mW/_C _C TJ, Tstg -65 to +150 TO-225 CASE 77 STYLE 1 3 21 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol RqJC Max Unit Thermal Resistance, Junction-to-Case 8.34 _C/W YWW BD78xG Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Y = Year WW = Work Week BD78x = Device Code x = 7 or 8 G = Pb-Free Package ORDERING INFORMATION Device BD787 BD787G BD788 BD788G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Package TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) Shipping 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box (c) Semiconductor Components Industries, LLC, 2006 1 February, 2006 - Rev. 11 Publication Order Number: BD787/D IIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIII I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII *Indicates JEDEC Registered Data 1. Pulse Test; Pulse Width v 300 ms, Duty Cycle v 2.0%. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted) Small-Signal Current Gain (IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IC = 0) (f = 0.1 MHz) Current-Gain - Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz) Base-Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (IC = 2.0 Adc, IB = 200 mAdc) (IC = 4.0 Adc, IB = 800 mAdc) DC Current Gain (IC = 200 mAdc, VCE = 3.0 Vdc) (IC = 1.0 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Characteristic BD787 - NPN, BD788 - PNP http://onsemi.com BD787 BD788 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICEO IEBO ICEX Cob hFE hfe fT Min 40 25 20 5.0 10 50 60 - - - - - - - - - - - - MaxIIII Unit 250 - - - 100 1.8 2.0 0.4 0.6 0.8 2.5 1.0 1.0 0.1 50 70 - - - mAdc mAdc mAdc mAdc MHz Vdc Vdc Vdc Vdc pF - - 2 BD787 - NPN, BD788 - PNP 16 TC PD, POWER DISSIPATION (WATTS) 1.6 TA PD, POWER DISSIPATION (WATTS) 12 1.2 8.0 0.8 4.0 0.4 0 20 40 60 80 100 120 140 0 160 T, TEMPERATURE (C) Figure 1. Power Derating + 30 V VCC 25 ms + 11 V 0 - 9.0 V tr, tf v 10 ns DUTY CYCLE = 1.0% RB 51 -4V D1 RC SCOPE t, TIME (ns) 500 300 200 100 70 50 30 20 td @ VBE(off) = 5.0 V BD787 (NPN) BD788 (PNP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 tr VCC = 30 V IC/IB = 10 TJ = 25C RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. 10 7.0 5.0 0.04 0.06 Figure 2. Switching Time Test Circuit Figure 3. Turn-On Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 D = 0.5 0.2 0.1 0.05 P(pk) RqJC(t) = r(t) RqJC RqJC = 8.34C/W MAX t1 t2 DUTY CYCLE, D = t1/t2 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 10 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 20 50 100 200 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 Figure 4. Thermal Response http://onsemi.com 3 BD787 - NPN, BD788 - PNP 10 1.0 ms IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.1 5.0 ms TJ = 150C dc 100 ms 500 ms 0.05 0.02 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BD787 (NPN) BD788 (PNP) 60 V 0.01 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C, T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area 2000 1000 700 500 t, TIME (ns) 300 200 100 70 50 30 20 0.04 0.06 tf ts VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 TJ = 25C C, CAPACITANCE (pF) 100 Cib 70 50 30 20 (NPN) (PNP) 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 10 1.0 (NPN) (PNP) 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Cob Figure 6. Turn-Off Time Figure 7. Capacitance NPN BD787 400 300 hFE , DC CURRENT GAIN 200 TJ = 150C 25C -55 C VCE = 1.0 V VCE = 3.0 V hFE , DC CURRENT GAIN 200 NPN BD788 100 70 50 30 20 TJ = 150C 25C VCE = 1.0 V VCE = 3.0 V 100 70 50 30 20 0.04 0.06 0.1 -55 C 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 10 0.04 0.06 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 Figure 8. DC Current Gain http://onsemi.com 4 BD787 - NPN, BD788 - PNP 2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 2.0 TJ = 25C 1.2 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 3.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 3.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.8 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 *APPLIES FOR IC/IB hFE/3 V, TEMPERATURE COEFFICIENTS (mV/C) +2.5 +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.04 0.06 0.1 0.2 qVB FOR VBE - 55C to 25C 0.4 0.6 1.0 2.0 4.0 25C to 150C *qVC FOR VCE(sat) 25C to 150C - 55C to 25C *APPLIES FOR IC/IB hFE/3 *qVC FOR VCE(sat) 25C to 150C - 55C to 25C qVB FOR VBE 25C to 150C - 55C to 25C -2.5 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. Temperature Coefficients http://onsemi.com 5 BD787 - NPN, BD788 - PNP PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M M A M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 BD787/D |
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